Vertical cavity surface emitting laser-based smart pixels with coplanar bump-bonded contacts

Randy Jurrat; Rui Pu; Eric M. Hayes; Daryl Pulver; Stewart A. Feld; Carl W. Wilmsen

doi:10.1117/12.256144

1 November 1996 Vertical cavity surface emitting laser-based smart pixels with coplanar bump-bonded contacts

Randy Jurrat, Rui Pu, Eric M. Hayes, Daryl Pulver, Stewart A. Feld, Carl W. Wilmsen

Proceedings Volume 2848, Materials, Devices, and Systems for Optoelectronic Processing; (1996) https://doi.org/10.1117/12.256144
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Integration of vertical cavity surface emitting lasers (VCSELs) onto a prefabricated smart pixel chip introduces fabrication problems since they can not be grown on foundry fabricated Si CMOS or GaAs MESFET circuit. This paper presents an approach to flip-chip bump-bonding VCSEL-arrays to a pixel chip in which each VCSEL is bonding directly to the appropriate pixel circuit. Thus, no added area is required and the interconnect capacitance is held to a minimum. The technique requires contacting both the n- and p-mirror of the VCSEL on the same side of the VCSEL chip and in the same plane. This allows bump bonding both contacts to the pixel chip and subsequent removal of the VCSEL chip substrate. The steps required to accomplish the VCSEL coplanar bonding include reactive ion etching of mesas and device separation in BCL3/Cl, electroplating a 4.5 micrometers high gold coplanar contact post, In/Sn alloy solder deposition, bonding to the smart pixel chip, and accurate alignment of the VCSEL and pixel chips, epoxy underfill and at last substrate removal.

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Randy Jurrat, Rui Pu, Eric M. Hayes, Daryl Pulver, Stewart A. Feld, and Carl W. Wilmsen "Vertical cavity surface emitting laser-based smart pixels with coplanar bump-bonded contacts", Proc. SPIE 2848, Materials, Devices, and Systems for Optoelectronic Processing, (1 November 1996); https://doi.org/10.1117/12.256144

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KEYWORDS

Vertical cavity surface emitting lasers

Etching

Gold

Epoxies

Reactive ion etching

Gallium arsenide

Field effect transistors

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