Trench isolation technology for high-performance complementary bipolar devices

Kevin C. Brown; Chris Bracken; Rashid Bashir; Kulwant Egan; Joe DeSantis; Abul Ehsanul Kabir; Wipawan Yindeepol; Joel McGregor; S. J. Prasad; Reda Razouk; Victor V. Boksha; Juan C. Rey

doi:10.1117/12.250883

13 September 1996 Trench isolation technology for high-performance complementary bipolar devices

Kevin C. Brown, Chris Bracken, Rashid Bashir, Kulwant Egan, Joe DeSantis, Abul Ehsanul Kabir, Wipawan Yindeepol, Joel McGregor, S. J. Prasad, Reda Razouk, Victor V. Boksha, Juan C. Rey

Author Affiliations +

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250883
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

A trench isolation architecture for a low voltage (< 15 V), high frequency, complementary bipolar process technology has been developed. This technology features shallow and deep trench isolation with a minimum design rule of 1.0 (mu) , along with a zero encroachment deposited field oxide. Trench etch process results suggest a mechanism whereby, depending on the amount of exposed silicon, the plasma can either be considered `silicon deficient' or `oxygen deficient.' Black silicon formation during trench etching has been eliminated with an in-situ removal of the photoresist after the hardmask oxide has been defined. Terrain isolation process simulation results are shown to be more accurate in depicting actual wafer processing structures than Tsuprem-4. Initial bipolar device characteristics are reported that illustrate the integration of the introduced PlaTOx device isolation architecture. Realized f_t/f_max are 6.3/9.5 GHz for NPN, and 3.8/8.2 GHz for PNP transistors.

Citation Download Citation

Kevin C. Brown, Chris Bracken, Rashid Bashir, Kulwant Egan, Joe DeSantis, Abul Ehsanul Kabir, Wipawan Yindeepol, Joel McGregor, S. J. Prasad, Reda Razouk, Victor V. Boksha, and Juan C. Rey "Trench isolation technology for high-performance complementary bipolar devices", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250883

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available