Paper
13 September 1996 In-line electrical probe for CD metrology
Elizabeth E. Chain, Mark D. Griswold
Author Affiliations +
Abstract
As device linewidths shrink to 0.5 micrometer and below, the ECD (electrical critical dimension) technique is a good choice for in-line CD (critical dimension) measurements on conducting substrates. In this size regime, ECD is poised to replace SEM (scanning electron microscope) as the standard tool of the semiconductor industry, with a measurement capability significantly better than that of the CD SEM. Keithley Instruments has developed an advanced electrical prober for use at Motorola's MOS-12 facility. This tool provides in-line CD measurements in a completely automated, hands-off 'load-and-go' mode that requires only wafer loading, measurement recipe loading, and a 'run' command for processing. Its expected capability will permit measurement of lines thinner than 0.5 micrometer accurately, and with complete data transfer to the factory data collection and analysis system. The measurement results are well correlated to SEM top-down measurements and their use as a SEM replacement would not result in any loss of necessary process characterization information. Results are also included from a contamination study performed as part of the production qualification process for this tool. Particulate contamination need not be a concern, even for In-Line testing. Conversion from SEM CD to ECD measurements on metal and polysilicon layers is expected to provide a number of benefits, including better process control for very thin lines through more data with improved repeatability and stability. Other expected benefits include equipment cost savings and improved cycle time.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elizabeth E. Chain and Mark D. Griswold "In-line electrical probe for CD metrology", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250897
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Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Scanning electron microscopy

Metals

Critical dimension metrology

Contamination

Wafer testing

Aluminum

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