Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

Jonathan Stohs; David J. Gallant; David J. Bossert; Steven R. J. Brueck

doi:10.1117/12.275604

6 June 1997 Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

Jonathan Stohs, David J. Gallant, David J. Bossert, Steven R. J. Brueck

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275604
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The linewidth enhancement factor, (alpha) , plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain (alpha) values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density.

Citation Download Citation

Jonathan Stohs, David J. Gallant, David J. Bossert, and Steven R. J. Brueck "Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275604

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