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Proceedings Article

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

[+] Author Affiliations
Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, R. E. Peale

Univ. of Central Florida (USA)

Justin W. Cleary, Walter R. Buchwald

Air Force Research Lab. (USA)

Himanshu Saxena, Oliver J. Edwards

Zyberwear, Inc. (USA)

Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230R (May 25, 2011); doi:10.1117/12.884005
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From Conference Volume 8023

  • Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
  • Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe
  • Orlando, Florida, USA | April 25, 2011

abstract

Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.

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Citation

Nima Nader Esfahani ; Christopher J. Fredricksen ; Gautam Medhi ; R. E. Peale ; Justin W. Cleary, et al.
"Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230R (May 25, 2011); doi:10.1117/12.884005; http://dx.doi.org/10.1117/12.884005


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