Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

[+] Author Affiliations
Justin W. Cleary

Solid State Scientific Corp. (USA)

Robert E. Peale

Univ. of Central Florida (USA)

Himanshu Saxena

Zyberwear, Inc. (USA)

Walter R. Buchwald

Air Force Research Lab. (USA)

Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230X (May 25, 2011); doi:10.1117/12.883480
Text Size: A A A
From Conference Volume 8023

  • Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
  • Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe
  • Orlando, Florida, United States | April 25, 2011

abstract

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Justin W. Cleary ; Robert E. Peale ; Himanshu Saxena and Walter R. Buchwald
"Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230X (May 25, 2011); doi:10.1117/12.883480; http://dx.doi.org/10.1117/12.883480


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.