Morphology and optical study of dye-doped TiO2-SiO2 thin films

Arvind K. Gathania; Naresh Dhiman; Ankita Sharma; B. P. Singh

doi:10.1117/12.904869

23 December 2011 Morphology and optical study of dye-doped TiO₂-SiO₂ thin films

Arvind K. Gathania, Naresh Dhiman, Ankita Sharma, B. P. Singh

Proceedings Volume 8204, Smart Nano-Micro Materials and Devices; 82043N (2011) https://doi.org/10.1117/12.904869
Event: SPIE Smart Nano + Micro Materials and Devices, 2011, Melbourne, Australia

Abstract

In the present work, we have prepared functional dye doped TiO2-SiO2 thin films by vertical sedimentation technique. Thin film samples are annealed at different temperature from 50^oC to 850^oC. Morphology and chemical bonding information is analysed using atomic force microscopy (AFM), and Fourier transform infrared spectroscopy (FTIR) respectively. Optical properties are characterized by using UV-visible spectroscopy. Effect of annealing temperature on the photonic forbidden band gap is also presented. The experimental measured values are compared with theoretical estimated results.

Citation Download Citation

Arvind K. Gathania, Naresh Dhiman, Ankita Sharma, and B. P. Singh "Morphology and optical study of dye-doped TiO₂-SiO₂ thin films", Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 82043N (23 December 2011); https://doi.org/10.1117/12.904869

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