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Proceedings Article

Design and fabrication of photonic crystals in epitaxial-free silicon for ultrathin solar cells

[+] Author Affiliations
Xianqin Meng, Guillaume Gomard

Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France) and Ecole Centrale de Lyon (France) and INSA de Lyon (France)

Valerie Depauw, Ounsi El Daif, Christos Trompoukis, Frederic Dross, Ivan Gordon

IMEC vzw (Belgium)

Emmanuel Drouard, Christian Seassal

Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France) and Ecole Centrale de Lyon (France)

Alain Fave

Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France) and INSA de Lyon (France)

Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 831207 (December 16, 2011); doi:10.1117/12.904383
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From Conference Volume 8312

  • Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III
  • Min Gu
  • Shanghai, China | November 13, 2011

abstract

In this paper, we present the integration of an absorbing photonic crystal within a thin film photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning the epitaxial crystalline silicon active layer as a 1D and 2D photonic crystal enabled to increase its integrated absorption by 37%abs and 68%absbetween 300 nm and 1100 nm, compared to a similar but unpatterned stack. In order to fabricate such promising cells, a specific fabrication processes based on holographic lithography, inductively coupled plasma etching and reactive ion etching has been developed and implemented to obtain ultrathin patterned solar cells.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Xianqin Meng ; Valerie Depauw ; Guillaume Gomard ; Ounsi El Daif ; Christos Trompoukis, et al.
"Design and fabrication of photonic crystals in epitaxial-free silicon for ultrathin solar cells", Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 831207 (December 16, 2011); doi:10.1117/12.904383; http://dx.doi.org/10.1117/12.904383


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