Paper
22 February 2012 CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio
Zhiyong Li, Liang Zhou, Yingtao Hu, Xi Xiao, Yude Yu, Jinzhong Yu
Author Affiliations +
Abstract
Improved Extinction Ratio of 25 dB was demonstrated in silicon based optical modulators on CMOS platform in China. The measurement results agree with the simulation, followed by a discussion about the effects of both propagation loss in Mach-Zehnder arms and power ratio at beam splitters and combiners. The analyses indicate that many considerations have to be taken into design and development of the compatible fabrication of these integrated silicon photonics, especially for the improved extinction ratio of optical modulators. In this summary, we propose the integrated optical modulators in SOI by use of the compatible CMOS processes under the modern CMOS foundry in Chinese homeland. And the measured results were shown, the fast response modulator with the data transmission rate of 10 Gbps.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiyong Li, Liang Zhou, Yingtao Hu, Xi Xiao, Yude Yu, and Jinzhong Yu "CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 833305 (22 February 2012); https://doi.org/10.1117/12.918869
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KEYWORDS
Modulators

Silicon

Optical modulators

Waveguides

Modulation

Erbium

Diodes

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