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Proceedings Article

Implications of triple patterning for 14nm node design and patterning

[+] Author Affiliations
Kevin Lucas, Gerard Luk-Pat, Ben Painter

Synopsys, Inc. (United States)

Chris Cork

Synopsys, Inc. (France)

Bei Yu

Univ. of Texas (United States)

David Z. Pan

The Univ. of Texas at Austin (United States)

Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 832703 (March 29, 2012); doi:10.1117/12.920028
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From Conference Volume 8327

  • Design for Manufacturability through Design-Process Integration VI
  • Mark E. Mason
  • San Jose, California | February 12, 2012

abstract

The upcoming 14nm logic node will require lithographic patterning of complex layout patterns with minimum pitches of approximately 44nm to 50nm. This requirement is technically feasible by reusing existing 20nm litho-etch-litho-etch (LELE) double patterning (DPT) methods with very strong restricted design rules. However, early indications are that the cost-effective design and patterning of these layouts will require lithographic methods with additional resolution, especially in two-dimensional configurations. If EUV lithography reaches maturity too late, the 14nm logic node will need other lithographic techniques and the corresponding physical design rules and EDA methodologies to be available. Triple patterning technology (TPT) is a strong option for 14nm node logic on both hole and line-space pattern layers. In this paper we study major implications of a 14nm logic TPT lithographic solution upon physical design, design rules, mask synthesis/EDA algorithms and their process interactions.

© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Kevin Lucas ; Chris Cork ; Bei Yu ; Gerard Luk-Pat ; Ben Painter, et al.
"Implications of triple patterning for 14nm node design and patterning", Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 832703 (March 29, 2012); doi:10.1117/12.920028; http://dx.doi.org/10.1117/12.920028


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