Autoalignment In Step-And-Repeat Wafer Printing

Ronald S. Hershel

doi:10.1117/12.957178

17 July 1979 Autoalignment In Step-And-Repeat Wafer Printing

Ronald S. Hershel

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957178
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

A fully automatic through-the-lens alignment method is described for use in step-and-repeat projection aligners. The method utilizes dark field illumination of the wafer, which is aligned to the reticle. It is shown that 2.5 pm wide alignment marks that are 2 mils in length provide an ample signal-to-noise ratio for 0.1 pm alignment accuracies. Various contributions to alignment error are examined such as the visibility of the alignment features, surface scatter on the wafer, and shot noise in the detected signal. Applications of these results to x, y, and theta alignment in step-and-repeat printing are offered.

Citation Download Citation

Ronald S. Hershel "Autoalignment In Step-And-Repeat Wafer Printing", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957178

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