Paper
11 December 1982 New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region
F. Capasso, W. T. Tsang, G. F. Williams
Author Affiliations +
Proceedings Volume 0340, Future Trends in Fiber Optic Communications; (1982) https://doi.org/10.1117/12.933665
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≈∞) compatible with high gain (>100).
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Capasso, W. T. Tsang, and G. F. Williams "New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 μm Wavelength Region", Proc. SPIE 0340, Future Trends in Fiber Optic Communications, (11 December 1982); https://doi.org/10.1117/12.933665
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Cited by 3 scholarly publications.
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KEYWORDS
Electrons

Avalanche photodetectors

Ionization

Gallium arsenide

Sensors

Superlattices

Avalanche photodiodes

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