Paper
26 September 1984 Planar And Channel Waveguides Fabricated By Nitrogen Ion Implantation In Fused Silica
I K. Naik
Author Affiliations +
Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939457
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
Single-mode, planar and channel waveguides were fabricated in fused silica substrates by sequential, high-energy (100 keV and 300 keV) nitrogen ion implantations. The planar waveguides were characterized by measurements of waveguide loss and guided-mode effective refractive indices. It was found that a post-implantation annealing treatment reduced the waveguide loss to a value as low as (0.1±0.1)dB/cm. Chemical characterization of the implanted and annealed surfaces, carried out by means of Auger electron spectroscopy, showed that nitrogen was incorporated into the silica glass as a result of the N+ implantations. Channel waveguides were also fabricated (using photolithographically-generated implantation masks in thin gold films) and evaluated in terms of their mode refractive indices.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I K. Naik "Planar And Channel Waveguides Fabricated By Nitrogen Ion Implantation In Fused Silica", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); https://doi.org/10.1117/12.939457
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Cited by 6 scholarly publications.
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KEYWORDS
Waveguides

Nitrogen

Ion implantation

Annealing

Refractive index

Channel waveguides

Ions

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