Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTe

Sohrab R. Mobasser; Timothy R. Hart

doi:10.1117/12.946330

28 June 1985 Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTe

Sohrab R. Mobasser, Timothy R. Hart

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946330
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Laser Raman scattering by phonons and two-magnons in antiferromagnetic and paramagnetic phases of manganese telluride has been measured and compared to theoretical prediction. Spectra were obtained experimentally on polished single crystals of. MnTe, using an argon ion laser, a spex double-grating spectromemter, and a photon counting detection system. We report the observation of one E2 phonon, predicted by a group theoretical analysis of the D46h crystal space group, at frequency of 178±1 cm -1, and abroad second order peak at frequency of 360±10 cm-1 which is attributed to a two-magnon scattering. A theoretical calcu-lation of the magnetic spin-wave dispersion was performed, starting from a Heisenberg spin Hamiltonian. A closed form solution of energy versus momentum in three-dimensions was obtained containing three unknown superexchange constants J1, J2, and J3. A Monte Carlo com-puter simulation of two-magnon joint density of states in the full Brillouin zone was used to fit experimental data. The best fit to experiment was obtained for superexchange constants: J1 = -1.440 meV, J2 = +0.220 meV, J3 = -0.024 meV. The spin wave dispersion curves in different symmetry directions were plotted using the obtained superexchange values.

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Sohrab R. Mobasser and Timothy R. Hart "Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTe", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946330

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