Inorganic Resists Based On Photo-Doped As-S Films

A. P. Firth; P. J.S. Ewen; A. E. Owen; C. M. Huntley

doi:10.1117/12.947829

18 April 1985 Inorganic Resists Based On Photo-Doped As-S Films

A. P. Firth, P. J.S. Ewen, A. E. Owen, C. M. Huntley

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947829
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

In recent years there has been considerable interest in inorganic resist systems based on the photo-doping of amorphous chalcogenide films, the majority of the research being devoted to Ge-Se films. This paper presents a detailed investigation of inorganic resists based on the photo-doping of Ag into As-S films. It is shown that high resolution patterns can be produced in such resists using holography or optical lithography and that they are compatible with wet-chemical or plasma etching. Structural studies using Raman spectro-scopy indicate that for best resolution the composition of the As-S film should be close to AS33S67 since on photo-doping it will yield a single-phase homogeneous material. A possible mechanism for the photo-doping process is described based on a tarnishing-type photo-chemical reaction. It is shown that the actinic radiation initiating the photo-dissolution effect is absorbed primarily in the photo-doped layer, close to the interface with the undoped As-S region.

Citation Download Citation

A. P. Firth, P. J.S. Ewen, A. E. Owen, and C. M. Huntley "Inorganic Resists Based On Photo-Doped As-S Films", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947829

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