Scanned Laser Imaging For Integrated Circuit Metrology

James T. Lindow; Simon D. Bennett; Ian R. Smith

doi:10.1117/12.949735

2 January 1986 Scanned Laser Imaging For Integrated Circuit Metrology

James T. Lindow, Simon D. Bennett, Ian R. Smith

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949735
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

This paper will discuss the design criteria for an optical imaging system capable of high accuracy measurements on IC devices. In particular, the problem of measurement repeatability is discussed in the case of devices with submicron dimensions and complicated three dimensional features. Preliminary experimental results are presented from a confocal scanning laser imager designed for inspection and measurement on production wafers, SiScan-1 (TM). The system provides three major advantages over previously available optical microscopes: a) higher resolution and high magnification, b) accurate and repeatable C.D. measurements on micron and submicron geometries and, c) surface topography profiles and measurements. Digital images at high magnification (8,000X) and with accurately calibrated pixel sizes (0.06 microns) are illustrated. The problem of object edge to image edge correspondence is discussed. In particular, the profiling ability of the system will be used to illustrate potential solutions to this problem.

Citation Download Citation

James T. Lindow, Simon D. Bennett, and Ian R. Smith "Scanned Laser Imaging For Integrated Circuit Metrology", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949735

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