Paper
16 June 1986 CCD Spatial Light Modulators using Electroabsorption Effects in Multiple Quantum Wells
B. E, Burke, W. D. Goodhue, K. B. Nichols
Author Affiliations +
Proceedings Volume 0613, Nonlinear Optics and Applications; (1986) https://doi.org/10.1117/12.960399
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
The recent observation of strong electroabsorption effects in AlGaAs/GaAs multiple quantum wells (MQWs) has raised the possibility of CCD-addressed spatial light modulators (SLMs) having much greater depth of modulation than obtainable with the Franz-Keldysh effect. In this paper, we review our work on CCD modulators employing each of these effects. The results from MQW structures are particularly promising and include optical modulation values as large as 50% at 852 nm. In addition, we have recently reported a new AlGaAs/GaAs CCD in which carriers are confined to a quantum well. This device was combined with a MQW structure, thus demonstrating the feasibility of integrating CCD and MQW structures on a common substrate.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. E, Burke, W. D. Goodhue, and K. B. Nichols "CCD Spatial Light Modulators using Electroabsorption Effects in Multiple Quantum Wells", Proc. SPIE 0613, Nonlinear Optics and Applications, (16 June 1986); https://doi.org/10.1117/12.960399
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Charge-coupled devices

Gallium arsenide

Modulation

Quantum wells

Modulators

Absorption

Electrons

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