Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz Silicon

J. Whitfield; C. J. Varker; S. S. Chan; S. R. Wilson; R. W. Carpenter; S. J. Krause; E. R. Weber

doi:10.1117/12.961197

26 June 1986 Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz Silicon

J. Whitfield, C. J. Varker, S. S. Chan, S. R. Wilson, R. W. Carpenter, S. J. Krause, E. R. Weber

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961197
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

CZ wafers have been heat treated with either a 2 step anneal (16 hrs. @ 800°C/16 hrs. @ 1050°C) or a single step anneal (16 hrs. @ 1050°C). Deep level transient spectroscopy and minority carrier lifetime measurements were obtained on processed wafers containing diode-capacitor arrays. Wafers from the seed end of the crystal (initial oxygen concentration [O_i ~ 40 ppm) with the 2 step anneal showed 2 electron traps E 1 (E_C-E_T = 0.41 ± 0.02 eV), and E2 (E_C-E_T = 0.23 ± 0.03 eV), the dominant trap E 1 is shown to correlate with generation lifetime. Wafers implanted with oxygen at 400 keV or 3.5 MeV with doses of 3 X 10¹⁵ and 1 X 10¹⁶ atoms cm^-2 with similar heat treatments reveal electron traps with the same energies as those observed in the unimplanted samples. The high dose samples show a much more complicated spectra, in which E1 and E2 are present. TEM analysis of the seed end unimplanted samples with 2 step anneal show plate type precipitates with punched out loops and dislocations. The tang-end showed octahedral precipitates. The cross sectional view of the implanted samples reveal the precipitates and dislocation loops in a well defined layer. ESR measurements on similar samples with similar anneals reveal residual phosphorus and thermal donors and a new, broad resonance in some of the 2 step annealed samples. This board peak which is not fully analyzed suggests a signature that is not typical of isolated paramagnetic point defects.

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J. Whitfield, C. J. Varker, S. S. Chan, S. R. Wilson, R. W. Carpenter, S. J. Krause, and E. R. Weber "Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz Silicon", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961197

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