Monolithic Optoelectronic Circuits For High-Speed Optical Interconnects

S. Ray; M. P. Walton; S. Palmquist; M. Hibbs-Brenner; E. Kalweit

doi:10.1117/12.965193

17 February 1987 Monolithic Optoelectronic Circuits For High-Speed Optical Interconnects

S. Ray, M. P. Walton, S. Palmquist, M. Hibbs-Brenner, E. Kalweit

Proceedings Volume 0703, Integration and Packaging of Optoelectronic Devices; (1987) https://doi.org/10.1117/12.965193
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

We report on the status of a monolithically integrated transceiver chip being developed in our lab. The functional components of this chip consist of a TJS laser, a photodetector, an amplifier, a 4:1 multiplexer, a 1:4 demultiplexer, and a gate-array. The total gate count is -500, and the chip is designed for operation at 1.0 Gbps. The receiver section of the chip has been tested with optical inputs at a 1.0-GHz clock frequency. Fabrication of the entire transceiver chip is in progress.

Citation Download Citation

S. Ray, M. P. Walton, S. Palmquist, M. Hibbs-Brenner, and E. Kalweit "Monolithic Optoelectronic Circuits For High-Speed Optical Interconnects", Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); https://doi.org/10.1117/12.965193

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