Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.

G. Niquet; J. P. Dufour; G. Chabrier; M. Q' Jani; P. Vernier

doi:10.1117/12.940900

22 April 1987 Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.

G. Niquet, J. P. Dufour, G. Chabrier, M. Q' Jani, P. Vernier

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940900
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into the semiconductor.

Citation Download Citation

G. Niquet, J. P. Dufour, G. Chabrier, M. Q' Jani, and P. Vernier "Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940900

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