Infrared Reflectance Spectroscopy Of Ion-Implanted Soi Structures

Bea M Lacquet; Pieter L Swart

doi:10.1117/12.940915

22 April 1987 Infrared Reflectance Spectroscopy Of Ion-Implanted Soi Structures

Bea M Lacquet, Pieter L Swart

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940915
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The use of IR reflectance measurements to study the properties of the insulating and surrounding layers obtained by implanting nitrogen into silicon is discussed. IR spectrometry yields not only information on the types and quantity of bonds in the implanted layer, but is also employed to determine other physical parameters of the layered structure. A model to simulate IR-reflectance measurements and extract parameters from it has been developed. The implanted wafer is modelled by a multilayered structure employing matrix methods in the analysis. The absorption peaks are represented by simple Lorentzian oscillators. IR reflectance spectra of the as-implanted and annealed samples were studied. The measured spectra were then compared with the model.

Citation Download Citation

Bea M Lacquet and Pieter L Swart "Infrared Reflectance Spectroscopy Of Ion-Implanted Soi Structures", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940915

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