Analysis Of Semiconductor Materials And Structures By Spectroellipsometry

D. E. Aspnes

doi:10.1117/12.947416

9 August 1988 Analysis Of Semiconductor Materials And Structures By Spectroellipsometry

D. E. Aspnes

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947416
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The extensive development of instrumentation and methods of data analysis in the 1970's resulted in the application of spectroellipsometry (SE) to a wide variety of material and structural problems, and its advantages and limitations are now fairly well established. Here, I assess the present status of the field, concentrating on applications of interest to semiconductor technology. Dielectric function measurements and microstructural analysis are now mature fields, with e data accurate to within a few percent now available for most common semiconductors and alloys, in some cases as a function of doping and temperature. Methods for preparing clean, dielectrically abrupt surfaces have been a byproduct of this work. Thicknesses of the multilayer transparent or semitransparent films of silicon technology can be determined nondestructively to accuracies comparable to those obtainable with cross-sectional transmission electron microscopy and Rutherford backscattering, with compositional information provided in addition. Examples of analyses of compound semiconductor structures are given, including quantum confinement effects and the determination of surface electric fields, but the strong optical absorption of these materials restricts such analyses to outermost layers until infrared instruments become more widely available. Examples pertaining to growth and etching show that the most fertile area for further work lies in real-time, in situ monitoring and control of processing, although full capabilities will be realized only after the development of next-generation instrumentation that can make simultaneous measurements at a number of wavelengths.

Citation Download Citation

D. E. Aspnes "Analysis Of Semiconductor Materials And Structures By Spectroellipsometry", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947416

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available