Photonic Applications Of Thin Film Gaas Grown On Silicon And Insulating Substrates By Molecular Beam Epitaxy

Jeffrey D. Morse; Glen M. McWright; Raymond P. Mariella; Charles F. McConaghey; Elaine M. Behymer; William H. Guthreau

doi:10.1117/12.950038

27 February 1989 Photonic Applications Of Thin Film Gaas Grown On Silicon And Insulating Substrates By Molecular Beam Epitaxy

Jeffrey D. Morse, Glen M. McWright, Raymond P. Mariella, Charles F. McConaghey, Elaine M. Behymer, William H. Guthreau

Author Affiliations +

Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950038
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Thin film GaAs layers grown by Molecular Beam Epitaxy (MBE) on silicon, semi-insulating GaAs, and insulating substrates have been investigated for application to optoelectronic circuit technology. Photoconductivity measurements were conducted to characterize the electronic transport properties of the epitaxial layers in terms of carrier recombination lifetime and effective drift mobility. By varying the epitaxial growth parameters, it is possible to obtain various levels of material quality which are suitable for various components of optoelectronic integrated circuits. Results from photodetectors fabricated from GaAs grown on various layers will be presented. The fabrication of ridge waveguides from GaAs grown on silicon dioxide will also be described. Finally, a procedure for growing high quality GaAs for active devices in situ with layers for picosecond photoconductors will be discussed.

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Jeffrey D. Morse, Glen M. McWright, Raymond P. Mariella, Charles F. McConaghey, Elaine M. Behymer, and William H. Guthreau "Photonic Applications Of Thin Film Gaas Grown On Silicon And Insulating Substrates By Molecular Beam Epitaxy", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); https://doi.org/10.1117/12.950038

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