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Proceedings Article

Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography

[+] Author Affiliations
James W. Thackeray, George W. Orsula, Edward K. Pavelchek, Dianne Canistro

Shipley Co., Inc. (United States)

Leonard E. Bogan, Jr., Amanda K. Berry, Karen A. Graziano

Rohm and Haas Co., Inc. (United States)

Proc. SPIE 1086, Advances in Resist Technology and Processing VI, 34 (August 22, 1989); doi:10.1117/12.953015
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From Conference Volume 1086

  • Advances in Resist Technology and Processing VI
  • Elsa Reichmanis
  • San Jose, CA | February 27, 1989

abstract

This paper describes the development of deep UV resist materials based on chemically amplified crosslinking systems for use in excimer laser photolithography at the KrF lasing wavelength of 248 nm. This work will describe the use of a transparent resin, polyp-vinyl)phenol, which has excellent plasma etch resistance and demonstrates high resolution (sub half-micron line-space pairs for a 1.0 micron thick film) when used in an Advanced Negative Resist (ANR) formulation, XP-8843. Under 140C post-exposure bake conditions, XP-8843 exhibits fast photospeed (15 mJ/cm2), high contrast (4.1), vertical sidewalls, and good process latitude.

© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

James W. Thackeray ; George W. Orsula ; Edward K. Pavelchek ; Dianne Canistro ; Leonard E. Bogan, Jr., et al.
"Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, 34 (August 22, 1989); doi:10.1117/12.953015; http://dx.doi.org/10.1117/12.953015


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