Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography

James W. Thackeray; George W. Orsula; Edward K. Pavelchek; Dianne Canistro; Leonard E. Bogan Jr.; Amanda K. Berry; Karen A. Graziano

doi:10.1117/12.953015

30 January 1989 Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography

James W. Thackeray, George W. Orsula, Edward K. Pavelchek, Dianne Canistro, Leonard E. Bogan Jr., Amanda K. Berry, Karen A. Graziano

Author Affiliations +

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953015
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

This paper describes the development of deep UV resist materials based on chemically amplified crosslinking systems for use in excimer laser photolithography at the KrF lasing wavelength of 248 nm. This work will describe the use of a transparent resin, polyp-vinyl)phenol, which has excellent plasma etch resistance and demonstrates high resolution (sub half-micron line-space pairs for a 1.0 micron thick film) when used in an Advanced Negative Resist (ANR) formulation, XP-8843. Under 140C post-exposure bake conditions, XP-8843 exhibits fast photospeed (15 mJ/cm²), high contrast (4.1), vertical sidewalls, and good process latitude.

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James W. Thackeray, George W. Orsula, Edward K. Pavelchek, Dianne Canistro, Leonard E. Bogan Jr., Amanda K. Berry, and Karen A. Graziano "Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953015

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