A New Mid-UV Resist With Oxygen Plasma Resistance

J. M. Liu; C. H. Tzeng

doi:10.1117/12.953058

30 January 1989 A New Mid-UV Resist With Oxygen Plasma Resistance

J. M. Liu, C. H. Tzeng

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953058
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A new silyl ether of resorcinol novolak resin (SERN) and a new photoactive compound (S-55NQ) have been developed for a bilayer resist system. The SERN resin is an addition-condensation type terpolymer from resorcinol, hexamethylenetetramine, and phenyl silyl ether (PSE), which is a reaction product of resorcinol and chlorosilane, under acid catalyzed condition. The S-55NQ sensitizer is a sulfonate ester of spiroglycol and naphthoquinone diazide. This alkaline soluble Si-containing resist, useful in the mid-UV region, shows high dry etching resistance to O₂ plasma and O₂ RIE. An etching rate ratio of 4.5 or higher based on HPR-204 as the bottom layer is obtained.

Citation Download Citation

J. M. Liu and C. H. Tzeng "A New Mid-UV Resist With Oxygen Plasma Resistance", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953058

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