A Comparison of Optical Gaussian Beam Lithography with Conventional E-beam and Optical Lithography

Paul C. Allen; Paul A. Warkentin

doi:10.1117/12.953130

25 July 1989 A Comparison of Optical Gaussian Beam Lithography with Conventional E-beam and Optical Lithography

Paul C. Allen, Paul A. Warkentin

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953130
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The photolithographic properties of scanned laser imaging systems are discussed in comparison with conventional optical projection printers and e-beam imaging systems. Because a scanned laser system can effectively stitch together a large number of small fields, the customary trade-off between resolution and field size does not have to be made, and higher NA lenses can be used. Residual system astigmatism can be corrected by adjustments to the input illumination of the lens. The imaging properties of a Gaussian beam system are fundamentally incoherent and are a strong function of the input beam truncation. Contrast curves are developed for different amounts of truncation and compared with the theoretical and experimental contrast of projection printers. Although e-beam systems can resolve smaller features than optical systems, the effective image contrast of features substantially larger than their minimum spot sizes is reduced by electron back-scattering. E-beam contrast curves are compared with those of modern optical lithography tools. Finally, the resolution limit for laser scanned lithography is explored based on available deep UV CW laser light sources and high NA lens technology: it is estimated to be below 0.2 μm.

Citation Download Citation

Paul C. Allen and Paul A. Warkentin "A Comparison of Optical Gaussian Beam Lithography with Conventional E-beam and Optical Lithography", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953130

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