Paper
28 November 1989 Progress In Indium Phosphide Solar Cell Research
I. Weinberg, D. J. Brinker, C. K. Swartz, R. E. Hart Jr.
Author Affiliations +
Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962032
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Following a short history of the previous terrestrial program, progress is reviewed, emphasizing the use of InP solar cells in space. State-of-the-art cells have been processed by open and closed tube diffusion, OMCVD and ion-implantation and DC magnetron sputtering. Air mass zero total area efficiencies near 19% were achieved and computer modelling studies indicate that efficiencies over 21% are feasible. Radiation effects studies in both the laboratory and space are described and a comparision made between the radiation resistance of InP, GaAs and Si. Computer modelling studies are described emphasizing the behavior of InP concentrator cells at high concentration and elevated temperature with applica-tion to both the Cassegranian and SLATS concentrator systems. Pro-duction cells are discussed including their intended use to power a spacecraft scheduled for launch in 1990. Several potentially fruit-ful areas are suggested for future research.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Weinberg, D. J. Brinker, C. K. Swartz, and R. E. Hart Jr. "Progress In Indium Phosphide Solar Cell Research", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962032
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