Photorefractive Effects In Semiconductors For Deep Level Spectroscopy

George C. Valley

doi:10.1117/12.962152

4 January 1990 Photorefractive Effects In Semiconductors For Deep Level Spectroscopy

George C. Valley

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962152
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

This talk discussed application of the electron/hole model of the photorefractive effect to observations in GaAs:EL2, InP:Fe, and CdTe:V that were obtained with cw and picosecond lasers. In this model both electrons and holes are photoionized from a single defect level with two ionization states (e.g., EL2⁰ and EL2⁺) as discussed by Valley (1986) and Strohkendl et al. (1986). In photorefractive semicon-ductors where the diffusion length is much larger than typical grating periods, it can be shown that the gain coefficient for photorefractive beam coupling depends primarily on two properties of the deep level defect, an effective trap density N_E = N₁N₂/(N₁ + N₂) and a competition factor ξ = (a_e - a_h)/(a_e + a_h) where N₁ and N₂ are the densities of the two levels while ae and ah are the absorption coefficients for production of electrons and holes. Other properties of the deep level defect, such as the recombination cross sections, can be obtained from corrections to the gain formulas for large grating periods and for low irradiances (Valley et al., 1988).

Citation Download Citation

George C. Valley "Photorefractive Effects In Semiconductors For Deep Level Spectroscopy", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962152

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