Paper
13 October 2011 Hot spot detection for indecomposable self-aligned double patterning layout
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Abstract
Self-aligned double patterning (SADP) lithography is a novel lithography technology which has the capability to define critical dimension (CD) using one single exposure, therefore holding a great opportunity for the next generation lithography process for the overlay mitigation. However, a necessary design manufacturing co-optimization step - the non-decomposability position detection (hot spot detection) - is still immature. In this paper, targeting the hot spot detection difficulties in SADP process, we first revisit out previous ILP-based SADP decomposition algorithm and provide an extended ILP-based hot spot detection without any preconditions on the design. Then, with some simple requirement that is commonly seen in 2D random layout, we further provided a graph based hot spot detection for an efficient hot spot detection. From the Nangate standard cell library, our experiment validates the hot spot detection process and demonstrates an SADP friendly design tyle is necessary for the upcoming 14nm technology node.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongbo Zhang, Yuelin Du, Martin D. F. Wong, and Rasit O. Topaloglu "Hot spot detection for indecomposable self-aligned double patterning layout", Proc. SPIE 8166, Photomask Technology 2011, 81663E (13 October 2011); https://doi.org/10.1117/12.896990
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Photomasks

Silicon

Detection and tracking algorithms

Double patterning technology

Lithography

Manufacturing

Binary data

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