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Proceedings Article

Total source mask optimization: high-capacity, resist modeling, and production-ready mask solution

[+] Author Affiliations
Moutaz Fakhry

IBM Almaden Research Ctr. (USA)

Yuri Granik, Kostas Adam

Mentor Graphics Corp. (USA)

Kafai Lai

IBM Semiconductor Research and Development Ctr. (USA)

Proc. SPIE 8166, Photomask Technology 2011, 81663M (October 13, 2011); doi:10.1117/12.898860
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From Conference Volume 8166

  • Photomask Technology 2011
  • Wilhelm Maurer; Frank E. Abboud
  • Monterey, California | September 19, 2011

abstract

As the demand for taking Source Mask Optimization (SMO) technology to the full-chip level is increasing, the development of a flow that overcomes the limitations which hinder this technology's moving forward to the production level is a priority for Litho-Engineers. The aim of this work is to discuss advantages of using a comprehensive novel SMO flow that outperforms conventional techniques in areas of high capacity simulations, resist modeling and the production of a final manufacturable mask. We show results that indicate the importance of adding large number of patterns to the SMO exploration space, as well as taking into account resist effects during the optimization process and how this flow incorporates the final mask as a production solution. The high capacity of this flow increases the number of patterns and their area by a factor of 10 compared to other SMO techniques. The average process variability band is improved up to 30% compared to the traditional lithography flows.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Moutaz Fakhry ; Yuri Granik ; Kostas Adam and Kafai Lai
"Total source mask optimization: high-capacity, resist modeling, and production-ready mask solution", Proc. SPIE 8166, Photomask Technology 2011, 81663M (October 13, 2011); doi:10.1117/12.898860; http://dx.doi.org/10.1117/12.898860


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