Development of CdZnTe radiation detectors

Aleksey Bolotnikov; Giuseppe Camarda; Anwar Hossain; Ki Hyun Kim; Ge Yang; Rubi Gul; Yonggang Cui; Ralph B. James

doi:10.1117/12.901077

8 September 2011 Development of CdZnTe radiation detectors

Aleksey Bolotnikov, Giuseppe Camarda, Anwar Hossain, Ki Hyun Kim, Ge Yang, Rubi Gul, Yonggang Cui, Ralph B. James

Proceedings Volume 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies; 819129 (2011) https://doi.org/10.1117/12.901077
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

Citation Download Citation

Aleksey Bolotnikov, Giuseppe Camarda, Anwar Hossain, Ki Hyun Kim, Ge Yang, Rubi Gul, Yonggang Cui, and Ralph B. James "Development of CdZnTe radiation detectors", Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 819129 (8 September 2011); https://doi.org/10.1117/12.901077

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available