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Proceedings Article

Growth of semimetallic ErAs films epitaxially embedded in GaAs

[+] Author Affiliations
Adam M. Crook, Hari P. Nair, Jong H. Lee, Domingo A. Ferrer, Deji Akinwande, Seth R. Bank

The Univ. of Texas at Austin (USA)

Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060R (September 16, 2011); doi:10.1117/12.896938
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From Conference Volume 8106

  • Nanoepitaxy: Materials and Devices III
  • Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam
  • San Diego, California, USA | August 21, 2011

abstract

We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Adam M. Crook ; Hari P. Nair ; Jong H. Lee ; Domingo A. Ferrer ; Deji Akinwande, et al.
"Growth of semimetallic ErAs films epitaxially embedded in GaAs", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060R (September 16, 2011); doi:10.1117/12.896938; http://dx.doi.org/10.1117/12.896938


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