Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

LPP EUV source development for HVM

[+] Author Affiliations
Björn A. M. Hansson, Igor V. Fomenkov, Norbert R. Böwering, Alex I. Ershov, William N. Partlo, David W. Myers, Oleh V. Khodykin, Alexander N. Bykanov, Curtis L. Rettig, Jerzy R. Hoffman, Ernesto Vargas L., Rod D. Simmons, Juan A. Chavez, William F. Marx, David C. Brandt

Cymer, Inc.

Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510R (March 23, 2006); doi:10.1117/12.656687
Text Size: A A A
From Conference Volume 6151

  • Emerging Lithographic Technologies X
  • Michael J. Lercel
  • San Jose, CA | February 19, 2006

abstract

This paper provides a detailed review of development progress for a laser-produced-plasma (LPP) extreme-ultra-violet (EUV) source with performance goals targeted to meet joint requirements from all leading scanner manufacturers. We present the latest results on drive laser power and efficiency, source fuel, conversion efficiency, debris mitigation techniques, multi-layer-mirror coatings, collector efficiency, intermediate-focus (IF) metrology, mass-limited droplet generation, laser-to-droplet targeting control, and system use and experience. Results from several full-scale prototype systems are discussed. In addition, a multitude of smaller lab-scale experimental systems have also been constructed and tested. This paper reviews the latest experimental results obtained on these systems with a focus on the topics most critical for an HVM source. Laser produced plasma systems have been researched as probable light source candidates for an EUV scanner for optical imaging of circuit features at 32nm and beyond nodes on the ITRS roadmap. LPP systems have inherent advantages over alternative source types, such as Discharge Produced Plasma (DPP), with respect to power scalability, etendue, collector efficiency, and component lifetime. The capability to scale LPP power with repetition rate and modular design is shown. A path to meet requirements for production scanners planned well into the next decade is presented. This paper includes current testing results using a 320mm diameter near-normal-incidence elliptical collector, the first to be tested in a full-scale LPP system. With the collector in-situ, intermediate focus (IF) metrology capability is enabled, and data is presented that describes the quality of light at IF.

© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Björn A. M. Hansson ; Igor V. Fomenkov ; Norbert R. Böwering ; Alex I. Ershov ; William N. Partlo, et al.
"LPP EUV source development for HVM", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510R (March 23, 2006); doi:10.1117/12.656687; http://dx.doi.org/10.1117/12.656687


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.