Combined absorber stack for optimization of the EUVL mask

Seung Yoon Lee; Tae Geun Kim; Chung Yong Kim; In-Yong Kang; Yong-Chae Chung; Jinho Ahn

doi:10.1117/12.656928

23 March 2006 Combined absorber stack for optimization of the EUVL mask

Seung Yoon Lee, Tae Geun Kim, Chung Yong Kim, In-Yong Kang, Yong-Chae Chung, Jinho Ahn

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61511Y (2006) https://doi.org/10.1117/12.656928
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Integration and optimization of the absorber stack has become a critical issue with the progress of the extreme ultraviolet lithography development because it influences many issues such as throughput, pattern fidelity, and mask yield. Simulation works to optimize an absorber stack were carried out and the results were empirically confirmed. TaN showed a great potential as an extreme ultraviolet absorber property but it did not meet the requirement for deep ultraviolet reflectivity for inspection. According to the simulation, Al₂O₃ was selected as an anti-reflection coating for DUV wavelength. Al₂O₃ ARC with optimum thickness reduces the DUV reflectivity from 42.5 to 4.4 % at 248 nm while maintaining the other properties. A novel absorber stack consisted of TaN absorber, Ru capping, and Al₂O₃ ARC is proposed, and the total thickness of the stack is only 47 nm and the EUV and DUV reflectivities are 0.97 % at 13.5 nm and 4.4 % at 248 nm, respectively.

Citation Download Citation

Seung Yoon Lee, Tae Geun Kim, Chung Yong Kim, In-Yong Kang, Yong-Chae Chung, and Jinho Ahn "Combined absorber stack for optimization of the EUVL mask", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511Y (23 March 2006); https://doi.org/10.1117/12.656928

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