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Proceedings Article

EUV-wavefront metrology at EUVA

[+] Author Affiliations
Chidane Ouchi, Seima Kato, Masanobu Hasegawa, Takayuki Hasegawa, Hideo Yokota, Katsumi Sugisaki, Masashi Okada, Katsuhiko Murakami, Jun Saito

Extreme Ultraviolet Lithography System Development Association (Japan)

Masahito Niibe

Univ. of Hyogo (Japan)

Mitsuo Takeda

Univ. of Electro-Communications (Japan)

Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522O (March 24, 2006); doi:10.1117/12.656039
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From Conference Volume 6152

  • Metrology, Inspection, and Process Control for Microlithography XX
  • Chas N. Archie
  • San Jose, CA | February 19, 2006

abstract

Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories, namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.

© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Chidane Ouchi ; Seima Kato ; Masanobu Hasegawa ; Takayuki Hasegawa ; Hideo Yokota, et al.
"EUV-wavefront metrology at EUVA", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522O (March 24, 2006); doi:10.1117/12.656039; http://dx.doi.org/10.1117/12.656039


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