Paper
24 March 2006 EUV wavefront metrology at EUVA
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Abstract
Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories, namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chidane Ouchi, Seima Kato, Masanobu Hasegawa, Takayuki Hasegawa, Hideo Yokota, Katsumi Sugisaki, Masashi Okada, Katsuhiko Murakami, Jun Saito, Masahito Niibe, and Mitsuo Takeda "EUV wavefront metrology at EUVA", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522O (24 March 2006); https://doi.org/10.1117/12.656039
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Cited by 8 scholarly publications.
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KEYWORDS
Wavefronts

Optical testing

Extreme ultraviolet

Diffraction

EUV optics

Projection systems

Extreme ultraviolet lithography

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