Dielectric properties of sol-gel TiO2(La) films

Mariuca Gartner; Constanta Parlog; Anna M. Szekeres; S. S. Simeonov; E. Kafedjiiska; Toma Stoica

doi:10.1117/12.321014

19 August 1998 Dielectric properties of sol-gel TiO₂(La) films

Mariuca Gartner, Constanta Parlog, Anna M. Szekeres, S. S. Simeonov, E. Kafedjiiska, Toma Stoica

Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.321014
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary

Abstract

High dielectric TiO₂(La) films deposited on the silicon waves by the sol-gel technique have been characterized by Spectroscopic Ellipsometry, Fourier Transformed Infrared Spectroscopy. Rutherford Backscattering Spectroscopy and electrical measurements. The microstructural, optical and electrical properties exhibit a strong dependence on the introduced lanthanum quality. For La/Ti > 0.1 all film properties are abruptly changed closer to that of pure lanthanum oxide.

Citation Download Citation

Mariuca Gartner, Constanta Parlog, Anna M. Szekeres, S. S. Simeonov, E. Kafedjiiska, and Toma Stoica "Dielectric properties of sol-gel TiO₂(La) films", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.321014

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