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Proceedings Article

Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

[+] Author Affiliations
TaeWan Kim, Toby J. Garrod, Luke J. Mawst, T. F. Kuech

Univ. of Wisconsin-Madison (USA)

Kangho Kim, Jaejin Lee

Ajou Univ. (Korea, Republic of)

S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

The Aerospace Corp. (USA)

Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561D (February 9, 2012); doi:10.1117/12.906961
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From Conference Volume 8256

  • Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
  • Alexandre Freundlich; Jean-Francois F. Guillemoles
  • San Francisco, California, USA | January 21, 2012

abstract

Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 x 1018 cm-3. After thermal annealing, the background hole concentration increased from 2x1018 to 2 x 1019 cm-3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25% under the AM1.5 (air mass) direct illumination, Voc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.

© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

TaeWan Kim ; Toby J. Garrod ; Kangho Kim ; Jaejin Lee ; Luke J. Mawst, et al.
"Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561D (February 9, 2012); doi:10.1117/12.906961; http://dx.doi.org/10.1117/12.906961


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