Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 x 1018 cm-3. After thermal annealing, the background hole concentration increased from 2x1018 to 2 x 1019 cm-3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25% under the AM1.5 (air mass) direct illumination, Voc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.