SiC surface was polished accurately with KrF laser irradiation in the presence of the HF and H2O2 mixed solutions. The SiC is very hard; moreover, the material is resistant to chemicals. Then we tried to polish the softened SiC chemically on the soft mat. The SiC surface was pressurized at 50 g/cm2 on the fluorocarbon polishing mat. Next the HF and H2O2 mixed solutions are infiltrated into the thin gap between the sample and the fluorocarbon, and KrF laser irradiated through the fluorocarbon turntable. By this irradiation, the SiC surface was oxidized and produced SiO2 and CO2. Then CO2 is diffused in an atmosphere, and only SiO2 solidified on the sample surface. The moment the SiO2 was formed, it dissolves in HF solution. After the etching, the polishing progresses by the friction with the fluorocarbon. The surface roughness was obtained 80 nm with 60 minute polishing with KrF laser irradiation (400 mJ/cm2, 20 pps) in 15% HF/H2O2 ambience.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.