Paper
20 February 2012 Theory of phonon-assisted intraband transitions in semiconductor quantum dots
Sandra Kuhn, Franz Schulze, Marten Richter, Andreas Knorr, Alexander Carmele
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Abstract
The investigation of the intersubband dynamics occurring in the conduction band of doped semiconductor quantum dots (QD's) has emerged as a powerful tool to probe their electronic structure and properties. Here, the temperature, the dephasing and the relaxation dynamics are of interest, both from a fundamental point of view but also regarding the performance of QD-based optoelectronic devices. Whereas the lineshape of QD interband transitions is well described by the independent boson model treating a diagonal electron-phonon coupling. For intraband transitions both diagonal and non-diagonal electron-phonon coupling are relevant. Typically, such problems involving diagonal and non-diagonal coupling are treated within approximate or perturbative approaches. Here, we present a fully quantized theory to calculate the coupled electron-phonon dynamics based on a non-perturbative equation of motion approach reproducing also correct results for limits of known exactly solvable models.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandra Kuhn, Franz Schulze, Marten Richter, Andreas Knorr, and Alexander Carmele "Theory of phonon-assisted intraband transitions in semiconductor quantum dots", Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 826004 (20 February 2012); https://doi.org/10.1117/12.906611
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Cited by 1 scholarly publication.
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KEYWORDS
Phonons

Quantum dots

Absorption

Electrons

Polarization

Bosons

Performance modeling

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