Nanosensor technology based on semiconductor nanocrystals

Jörg Martin; Ulrike Staudinger; Emrah Demir; Christian Spudat; Petra Pötschke; Brigitte Voit; Thomas Otto; Thomas Gessner

doi:10.1117/12.922954

1 February 2012 Nanosensor technology based on semiconductor nanocrystals

Jörg Martin, Ulrike Staudinger, Emrah Demir, Christian Spudat, Petra Pötschke, Brigitte Voit, Thomas Otto, Thomas Gessner

Author Affiliations +

Proceedings Volume 8264, Integrated Optics: Devices, Materials, and Technologies XVI; 82641M (2012) https://doi.org/10.1117/12.922954
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We present a new concept of material integrated sensor technology for detection, storage and visualization of mechanical stress and load conditions. Key feature is a double layer consisting of a piezoelectric layer and a semiconductor nanocrystal polymer composite film. Electrical charges are generated within the piezo layer by application of a mechanical load to the structure. The charges are transferred to the composite film and injected into the nanocrystals, causing non-radiative exciton recombination. This results in photoluminescence quenching, which can be detected as local optical contrast. The photoluminescence of CdSe/ZnS core/shell quantum dots has been switched off by application of external voltages smaller than 20 V. It was possible to store the charges in the QDs, and hence the off-state, for several hours. Optical contrast ratios up to 1:125 have been detected so far.

Citation Download Citation

Jörg Martin, Ulrike Staudinger, Emrah Demir, Christian Spudat, Petra Pötschke, Brigitte Voit, Thomas Otto, and Thomas Gessner "Nanosensor technology based on semiconductor nanocrystals", Proc. SPIE 8264, Integrated Optics: Devices, Materials, and Technologies XVI, 82641M (1 February 2012); https://doi.org/10.1117/12.922954

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