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Proceedings Article

Surface plasmon enhanced InGaN light emitter

[+] Author Affiliations
Koichi Okamoto, Isamu Niki, Alexander Shvartser, George Maltezos, Axel Scherer

California Institute of Technology (United States)

Yukio Narukawa, Takashi Mukai

Nichia Corp. (Japan)

Koji Nishizuka, Yoichi Kawakami

Kyoto Univ. (Japan)

Proc. SPIE 6182, Photonic Crystal Materials and Devices III, 94 (April 13, 2005); doi:10.1117/12.592261
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From Conference Volume 6182

  • Photonic Crystal Materials and Devices III
  • Ali Adibi; Shawn-Yu Lin; Axel Scherer
  • Strasbourg, France | April 03, 2006

abstract

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters. © (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Koichi Okamoto ; Isamu Niki ; Alexander Shvartser ; George Maltezos ; Yukio Narukawa, et al.
" Surface plasmon enhanced InGaN light emitter ", Proc. SPIE 6182, Photonic Crystal Materials and Devices III, 94 (April 13, 2005); doi:10.1117/12.592261; http://dx.doi.org/10.1117/12.592261


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