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Proceedings Article

Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers

[+] Author Affiliations
Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Friedhard Roemer

ETH Zurich (Switzerland)

Georg Feicht, Ulrich T. Schwarz

Univ. of Regensburg (Germany)

Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840E (April 14, 2006); doi:10.1117/12.662048
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From Conference Volume 6184

  • Semiconductor Lasers and Laser Dynamics II
  • Daan Lenstra; Markus Pessa; Ian H. White
  • Strasbourg, France | April 03, 2006

abstract

In this contribution, microscopic simulation of optical gain in GaN-based short-wavelength lasers is presented. The model is used to perform a design study of different active regions, and to discuss the impact of inhomogeneous broadening, carrier-induced screening of the piezo charges, and well thickness on material gain and laser threshold current. As a reference, the model parameters are calibrated with temperature dependent Hakki-Paoli measurements of spectral gain. Excellent agreement between measurement and simulation is achieved, which gives the design studies a quantitative character.

© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Bernd Witzigmann ; Valerio Laino ; Mathieu Luisier ; Friedhard Roemer ; Georg Feicht, et al.
"Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840E (April 14, 2006); doi:10.1117/12.662048; http://dx.doi.org/10.1117/12.662048


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