Scanning nano-Raman spectroscopy of semiconducting structures

R. D. Hartschuh; N. Lee; D. Mehtani; A. Kisliuk; M. D. Foster; A. P. Sokolov; J. F. Maguire

doi:10.1117/12.681621

3 October 2006 Scanning nano-Raman spectroscopy of semiconducting structures

R. D. Hartschuh, N. Lee, D. Mehtani, A. Kisliuk, M. D. Foster, A. P. Sokolov, J. F. Maguire

Proceedings Volume 6324, Plasmonics: Nanoimaging, Nanofabrication, and their Applications II; 63240N (2006) https://doi.org/10.1117/12.681621
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Tip-enhanced Raman spectroscopy (TERS) using side illumination is a promising spectroscopic tool for nanoscale characterization of chemical composition, structure, stresses and conformational states of non-transparent samples. Recent progress has shown signal enhancements for a variety of samples, including break-through enhancements of semiconductors. In this work, optimization of the polarization geometry increases contrast between near-field and far-field signals on Si and improves imaging quality. Two-dimensional images of semiconductor nanostructures show reasonable agreement between topographical and TERS images. These recent TERS results using both silver- and gold-coated tips demonstrate localization of the Raman enhancement to within approximately 20 nm of the tip. Also, the enhanced Raman signal of a strained Si layer is separated from an underlying Si substrate, which is encouraging for potential strain distribution analysis of silicon nanostructures.

Citation Download Citation

R. D. Hartschuh, N. Lee, D. Mehtani, A. Kisliuk, M. D. Foster, A. P. Sokolov, and J. F. Maguire "Scanning nano-Raman spectroscopy of semiconducting structures", Proc. SPIE 6324, Plasmonics: Nanoimaging, Nanofabrication, and their Applications II, 63240N (3 October 2006); https://doi.org/10.1117/12.681621

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