The transport and annealing properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition
(PLD) are studied. The electron carrier concentration for (Zn,Mg)O:P films decreases with increasing deposition and Ar
annealing temperature. All the films exhibit good crystallinity with c-axis orientation. This result indicates the
importance of activation of the P dopant in (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show less
dependence on the deposition growth temperatures. The resistivity of the (Zn,Mg)O:P films is significantly higher than
the ZnO:P films grown under similar conditions, indicating separation of the conduction band edge relative to the defect
donor state. The annealed ZnO:P films are n-type with resistivity dependent on annealing temperature.
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