GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy

Z. Y. Zhang; C. Scurtescu; M. T. Taschuk; Y. Y. Tsui; R. Fedosejevs; M. Blumin; I. Saveliev; S. Yang; H. E. Ruda

doi:10.1117/12.707736

8 September 2006 GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy

Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. E. Ruda

Proceedings Volume 6343, Photonics North 2006; 63432N (2006) https://doi.org/10.1117/12.707736
Event: Photonics North 2006, 2006, Quebec City, Canada

Abstract

A Quantum-dot saturable absorber mirror (QD-SAM) has been fabricated by the molecular beam epiiaxy (MBE) technique. Preliminary measurements show that our QD-SAM is a very promising candidate for passive mode-locking a fiber laser or a solid state laser with wavelength in the range of 970-1090nm. The 22%-33% dips in the reflectivity spectrum are observed, which are attributed to quantum dot absorption, indicating the potential for a large modulation depth and hence generation of ultra-short laser pulses through mode-locking.

Citation Download Citation

Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, and H. E. Ruda "GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy", Proc. SPIE 6343, Photonics North 2006, 63432N (8 September 2006); https://doi.org/10.1117/12.707736

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