High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm

Dan A. Yanson; John H. Marsh; Stephen Najda; Stewart D. McDougall; Hassan Fadli; Graeme Masterton; Bocang Qiu; Olek P. Kowalski; Gianluca Bacchin; Gordon McKinnon

doi:10.1117/12.699038

7 February 2007 High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm

Dan A. Yanson, John H. Marsh, Stephen Najda, Stewart D. McDougall, Hassan Fadli, Graeme Masterton, Bocang Qiu, Olek P. Kowalski, Gianluca Bacchin, Gordon McKinnon

Author Affiliations +

Proceedings Volume 6456, High-Power Diode Laser Technology and Applications V; 64560L (2007) https://doi.org/10.1117/12.699038
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

In this paper we report the development of high power high brightness semiconductor laser chips using a combination of quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors (LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.

Citation Download Citation

Dan A. Yanson, John H. Marsh, Stephen Najda, Stewart D. McDougall, Hassan Fadli, Graeme Masterton, Bocang Qiu, Olek P. Kowalski, Gianluca Bacchin, and Gordon McKinnon "High-power high-brightness high-reliability laser diodes emitting at 800-1000 nm", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560L (7 February 2007); https://doi.org/10.1117/12.699038

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