Paper
7 March 2007 Effect of high carrier density on luminescence thermometry in semiconductors
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Abstract
We present a brief analysis of laser cooling in semiconductor quantum wells with emphasis on a previous experiment that gave evidence for local cooling. This work is re-examined in the context of light management, heat removal, and how increasing photo-carrier density affects luminescence. Our main conclusion is that using a single laser to both pump the sample and monitor temperature may lead to ambiguity in semiconductor cooling experiments.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael P. Hasselbeck, Mansoor Sheik-Bahae, and Richard I. Epstein "Effect of high carrier density on luminescence thermometry in semiconductors", Proc. SPIE 6461, Laser Cooling of Solids, 646107 (7 March 2007); https://doi.org/10.1117/12.709973
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Cited by 14 scholarly publications.
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KEYWORDS
Luminescence

Excitons

Quantum wells

Semiconductors

Semiconductor lasers

Gallium arsenide

Thermometry

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