The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

Wei-Jen Chen; Da-Chuan Kuo; Cheng-Wei Hung; Chih-Chun Ke; Hui-Tang Shen; Jen-Cheng Wang; Ya-Fen Wu; Tzer-En Nee

doi:10.1117/12.700447

7 February 2007 The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

Wei-Jen Chen, Da-Chuan Kuo, Cheng-Wei Hung, Chih-Chun Ke, Hui-Tang Shen, Jen-Cheng Wang, Ya-Fen Wu, Tzer-En Nee

Author Affiliations +

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680T (2007) https://doi.org/10.1117/12.700447
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

In this work, thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30^oC to 100^oC. The current-dependent electroluminescence (EL) spectra, current-voltage (I-V) curves and luminescence-current (L-I) curve have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW heterostructures. Experimentally, both the forward voltages decreased with slope of -2.6 mV/K and the emission peak wavelength increased with slope of +4.5 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the band gap shrinkage effect. With increasing injection current, it has been found the strong current-dependent blueshift of -0.048 nm/mA in EL spectra. It was attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect, resulted from the piezoelectric polarization and the spontaneous polarization in InGaN/GaN heterostructures. The junction temperature calculated by forward voltage was from 25.6 to 14.5^oC and by emission peak shift was from 22.4 to 35.6^oC.

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Wei-Jen Chen, Da-Chuan Kuo, Cheng-Wei Hung, Chih-Chun Ke, Hui-Tang Shen, Jen-Cheng Wang, Ya-Fen Wu, and Tzer-En Nee "The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680T (7 February 2007); https://doi.org/10.1117/12.700447

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