High output power 670nm VCSELs

Klein Johnson; Mary Hibbs-Brenner

doi:10.1117/12.715083

7 February 2007 High output power 670nm VCSELs

Klein Johnson, Mary Hibbs-Brenner

Proceedings Volume 6484, Vertical-Cavity Surface-Emitting Lasers XI; 648404 (2007) https://doi.org/10.1117/12.715083
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The VCSELs investigated in this work are based upon AlGaAs semiconductor mirrors with AlGaInP based active regions. Single mode optical output powers at 670nm in excess of 2.8mW at a 20C ambient temperature have been achieved, with single mode output powers in excess of 1mW at 60C and 0.5mW at 70C. Single mode devices continue to lase up to temperatures in excess of 75C. Record output powers in excess of 11.5mW have been achieved in 673nm multi-mode devices at 20C, with power conversion efficiencies as high as 22.9%. The VCSELs are linearly polarized and are stable over a wide range of drive currents, with a typical SM beam divergence of approximately 7.5 degrees full-width half maximum at 5mA. The paper will provide additional detail regarding the performance characteristics of these devices.

Citation Download Citation

Klein Johnson and Mary Hibbs-Brenner "High output power 670nm VCSELs", Proc. SPIE 6484, Vertical-Cavity Surface-Emitting Lasers XI, 648404 (7 February 2007); https://doi.org/10.1117/12.715083

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