High-temperature and high-power terahertz quantum-cascade lasers

Benjamin S. Williams; Qi Qin; Sushil Kumar; Qing Hu; John L Reno

doi:10.1117/12.714207

8 February 2007 High-temperature and high-power terahertz quantum-cascade lasers

Benjamin S. Williams, Qi Qin, Sushil Kumar, Qing Hu, John L Reno

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 64850M (2007) https://doi.org/10.1117/12.714207
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We summarize recent results in the development of terahertz quantum cascade lasers (QCLs) based on resonant-phonon active region designs. First, we describe attempts to improve high-temperature operation of terahertz QCLs by the use of double-phonon depopulation in order to prevent thermal backfilling of the lower radiative state. While the best of the three tested devices displayed a threshold current density of J_th=170 A/cm² at 5 K and lased up to 138 K in pulsed mode, no temperature advantage was observed compared to single-phonon designs. Also, we describe high power operation of two different THz QCLs that emit up to 248 mW (pulsed) and 135 mW (continuous-wave) at 4.3-4.5 THz, and 75 mW (pulsed) at 4.8-5.0 THz.

Citation Download Citation

Benjamin S. Williams, Qi Qin, Sushil Kumar, Qing Hu, and John L Reno "High-temperature and high-power terahertz quantum-cascade lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850M (8 February 2007); https://doi.org/10.1117/12.714207

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